摘要
用X射线劳厄透射形貌术拍摄了用于制备多元线列探测器的碲镉汞小晶片的形貌相,观察到在碲镉汞小晶片中存在的各种晶体缺陷,如晶格扭曲、亚晶块、滑移线和其它缺陷。结合晶片扭曲和滑移的模型,分析了小晶片的受力状况。实验表明,在普通的X射线光源上,用劳厄透射形貌术能以20μm的分辨率无损检测用于制备多元线列探测器的碲镉汞小晶片中的晶体缺陷;在不良的器件工艺中,小晶片的晶格会受到明显的损伤,严重地影响了小晶片的电学参数和多元线列探测器的性能。
X-rays topographs of the HgCdTe small slice, used for fabricating linear array detectors, were taken with transmission Laue method. Various crystal defects such as lattice twist, sub-grain boundaries, slip lines and other defects have observed. On basis of the wafer twist and slip model, the stress state of the small slice are studied. The experimental results show that crystal defects in the small HgCdTe slice can been non-destructively measured in resolution 20 micrometers using transmission Laue method with ordinary X-rays sources. It is clear that the cutting and polishing of HgCdTe wafers with usual technology will damage the crystal and degrade its electrical properties, and then the performance of the multi-element linear array detectors.
出处
《红外技术》
CSCD
1993年第6期5-8,共4页
Infrared Technology
关键词
碲镉汞小晶片
晶体缺陷
X射线形貌相
The small slice of HgCdTe
Crystal defects
X-rays topography
