摘要
介绍了硅技术的发展及现状 ;主要分析了硅技术发展中遇到的极限挑战及可能突破的方法 ,预测了 2
The development and the newest state of Si technology are introduced. Then the challenges of physics limits occurred in the development of process and its possible solution are analyzed. The development trend of Si technology in 21st century is forecasted.
出处
《微电子技术》
2003年第2期1-3,24,共4页
Microelectronic Technology
关键词
硅技术
极限
突破
Si technology
Limits
Breakthrough
