摘要
以聚焦的A_r^+激光束诱导多晶硅膜的淀积,在可移动的反应器上实现了宽度小于激光束径的多晶硅精细线条的直接书写。这可以视为VLSI的一种新的布线工艺的雏形。
The fine polysilicon lines with width less than the beam diameter of laser were deposited induced by focused Ar+laser in a movable reactor, The laser writting of polysilicon could be seen as a embryo of new VLSI wiring technology.
出处
《河北大学学报（自然科学版）》
CAS
1992年第1期40-44,共5页
Journal of Hebei University(Natural Science Edition)
关键词
激光诱导淀积
多晶硅
精细线条
Ar^+laser stimulated CVD, Fine polysilicon line.
