摘要
文章运用美国宾州大学发展的 AMPS程序模拟计算了 n-型纳米硅 ( n+ -nc-Si∶ H) /p-型晶体硅 ( p-c-Si)异质结太阳电池的光伏特性。结果显示 ,界面缺陷态是决定电池性能的关键因素 ,显著影响电池的开路电压 ( VOC和填充因子 ( F F)。计算得到了这种电池理想情况下 (无界面态、有背面场、正背面反射率分别为 0和 1 )的理论极限效率 ηmax=3 1 .1 7% ( AM1 .5 1 0 0 MW/cm2 0 .40～ 1 .1 0 μm波段 )。
AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si∶H/c-Si solar cells. It is shown that interface states are essential factors prominently influencing open circuit voltages (V OC ) and fill factors (FF) of these structured solar cells. Theoretical maximum efficiency of up to 31.17%(AM1.5 100mW/cm 2 0.40～1.1μm) has been obtained with BSF structure, idealized light-trapping effect(R F=0, R B=1) and no interface states.
出处
《云南师范大学学报（自然科学版）》
2003年第3期23-26,共4页
Journal of Yunnan Normal University:Natural Sciences Edition
基金
国家重点基础研究发展规划 ( 973 )资助项目 (批准号 :G2 0 0 0 0 2 82 0 1 )
