摘要
用退火的方法改变了纳米桂（nc－Si：H）薄膜的微结构。用Raman散射和共振核反应方法分析了薄膜的微结构变化。结果表明，薄膜的氢含量是影响薄膜光学带隙的主要因素，而薄膜的晶态体积比和晶粒尺寸是影响薄膜电导率的主要因素。
The structures of nanocrystalline silicon films (nc-Si: H) are changed by high tem-perature annealing. The hydrogen content (CH) of nc-Si: H is determined by resonant nucle-ation reaction analysis. The grain size d and grain volume fraction (Xc) of nc-Si: H are gainedby Raman scattering. It is concluded that CH is the main factor that affect the optical gap whilethe crystalline volume fraction and the grain size are crucial to the conductivity.
出处
《西安理工大学学报》
CAS
1997年第4期320-323,共4页
Journal of Xi'an University of Technology
基金
机械工业部科技基金!96251412
