摘要
氮化铝基板因具有高热导率、低介电常数、与硅相匹配的热膨胀系数等优良的物理性能,被誉为新一代理想基板材料。详细综述了AlN板的国内外研究现状及其导热机理;介绍并分析了基片制备的工艺流程和影响因素;概括总结了AlN基板的金属化和烧结工艺方面的研究进展;展望了AlN基板的发展趋势和前景。
With excellent characteristics such as high thermal conduction,low dielectric constant and an expansion coefficient that matches with silicon,substrate of A1N is considered as an ideal substrate material. This paper describes in detail new progress abroad and at home and thermal conduction mechanism,introduces and analyzes technological process and influencing factors for A1N package preparation,sums up progress in-metalization and sintering technology,and finally suggests the development trend of AlN.
出处
《材料导报》
EI
CAS
CSCD
2003年第3期35-37,共3页
Materials Reports
