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锆对Cr-Si-Al电阻薄膜微观结构和电性能的影响 被引量：2

Effect of Zirconium on the Microstructure and Electrical Properties of Cr Si Al Resistive Films
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摘要 研究了退火态 Cr- Si- Al和 Cr- Si- Al- Zr薄膜的微观结构和电性能 .结果表明 ,溅射态非晶薄膜 Cr- Si- Al和 Cr- Si- Al- Zr在加热到 70 0°C的过程中 ,主要析出 2种晶化相 :Cr(Al,Si) 2 和 Si纳米晶化相 ,其中 Cr- Si- Al- Zr薄膜中的晶化相 Cr(Al,Si) 2 包含有少量 Zr原子 .Zr原子的加入抑制了晶化相的形核和长大 ,从而 Cr- Si- Al- Zr薄膜与 Cr- Si- Al薄膜相比 ,需更高的退火温度才能达到趋于零的电阻温度系数 .因此 ,Cr- Si- Al- Zr薄膜具有更好的电学稳定性能 . The microstructure and electrical properties of annealed Cr-Si-Al and Cr-Si-Al-Zr films were investigated. When sputtered amorphous Cr-Si-Al and Cr-Si-Al-Zr films were heated up to 700°C, both of them were found to crystallize into two phases: the nanocrystalline Cr(Al,Si)2 and Si phase. For Cr-Si-Al-Zr films, zirconium atoms were also found to be dissolved in the crystallization phase Cr(Al,Si)2 in small amounts. The addition of Zr into amorphous Cr-Si-Al films inhibited the nucleation and growth of the crystallization phase, resulting in the higher annealing temperatures for Cr-Si-Al-Zr films in comparison with Cr-Si-Al films to obtain a small temperature coefficient of resistance. As a result, the Cr-Si-Al-Zr films have higher electrical stability.
作者 董显平 林泽伟 吴建生 毛立忠
机构地区 上海交通大学教育部高温材料及高温测试重点实验室
出处 《上海交通大学学报》 EI CAS CSCD 北大核心 2003年第2期236-240,共5页 Journal of Shanghai Jiaotong University
基金 国家自然科学基金资助项目 ( 50 1 31 0 30 )
关键词 电阻薄膜 微观结构 晶化 锆 电学稳定性 Crystallization Dynamic mechanical analysis Electric properties Microstructure Zirconium
分类号 TM544.4 [电气工程—电器]
  • 相关文献

参考文献10

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共引文献3

同被引文献28

  • 1董显平,吴建生,毛大立,毛立忠.在中等阻值范围内NiCr-O系及Cr-Si系电阻薄膜的应用比较[J].上海交通大学学报,2000,34(12):1610-1614. 被引量：4
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上海交通大学学报
2003年 第2期

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