摘要
给出一种测量高g值冲击加速度的硅微机械加速度传感器的结构和动力学模型 ,此传感器为整体式悬臂梁结构 ,采用硅微机械加工技术制作 ,便于封装和大批量低成本制造。其敏感方向在硅片平面内 ,两个压敏电阻分布在悬臂梁的顶端 ,两个完全相同的悬臂梁沿相反方向分布 ,四个压敏电阻构成惠斯通全桥连接 ;悬臂梁的过载保护采用上下两个曲面 ,一方面有效地提高悬臂梁的过载保护能力 ,另一方面调节加速度传感器的压膜阻尼 ,使之接近临界阻尼 ,有效抑制自由振动模态 ,提高测量精度。
The present work summarizes the structure and dynamic model of a high g shock Silicon micromachined accelerometer. The device, formed by advanced Silicon bulk micromachining technology, is with single chip structure that facilitates packaging and contributes to low-cost mass-production.The sensing direction of the accelerometer is in the wafer plane. Two piezoresistors are located near both edges of the top surface of the cantilever two cantilevers with identical construction are laid out in opposite direction. Four piezoresistors form a full Wheatstone bridge. A novel curved over-range stop protection structure is designed and micromachined to improve protection of over-range shock and adjust damping to critical damping to depress free mode resonance for improving measurement accuracy.
出处
《机械强度》
CAS
CSCD
北大核心
2003年第2期148-150,214,共4页
Journal of Mechanical Strength
关键词
曲面过载保护
冲击
硅微机械加速度传感器
压膜阻尼
Curved over-range stop protection
Shock
Silicon micromachined accelerometer
Damping
