摘要
本文研究了Cd_2SnO_4薄膜某些光学的性质。Cd_2SnO_4薄膜具有许多优异的光电特性,例如它有很低的电阻率,同时又有十分高的光透射率。实验研究表明,Cd_2SnO_4膜的光隙能随着氧浓度降低以及在真空中退火处理后而增加。这是由于简并化的半导体材料中有较大的Burstien-Moss效应所致。
In this paper, some optical properies of Cd2SnO4 films have been studied. Cd2SnO4 thin films show extremely promising properties such as low, metal - like electrical resistivity high transmission in the visible range of the light spectrum. Experimental results have shown that optical gap energy of Cd2SnO4 films is increased as oxygen concentration decreased and after the samples are annealed in the vacuum. This is due to the large Burstien-Moss shift in conductive degenerate semiconductors.
出处
《甘肃科学学报》
1992年第1期25-27,共3页
Journal of Gansu Sciences
基金
国家自然科学基金资助项目
