摘要
研究了在Ａｒ＋Ｏ２混合气氛中从Ｃｄ－Ｉｎ和Ｏｄ－Ｓｎ合金靶射频反应溅射而成的ＣｄＩｎ２Ｏ４和Ｃｄ２ＳｎＯ４膜的Ｘ－光电子能谱。实验结果表明了粉末Ｃｄ、Ｉｎ、Ｓｎ、ＳｎＯ２、Ｉｎ２Ｏ３和ＣｄＩｎ２Ｏ４、Ｃｄ２ＳｎＯ４膜的Ｃｄ、Ｉｎ、Ｓｎ３ｄ３／２和３ｄ５／２ＸＰＳ峰值位置和形状的区别，并讨论了Ｏ１ｓＸＰＳ峰随氧浓度的变化。当氧浓度增加时，Ｏ１ｓ分为两个峰。
n this paper. CdIn2O4 and Cd2SnO4 films which were prepared by rf reactive sputtering from Cd-In and Cd-Sn alloy targets in an Ar+O2 atmosphere are studied by X-ray photoelectronic spectroscopy.Experimental results have shown that the 3d3/2 and 3d5/2 peaks of Cd. In and Sn from Cd,In, Sn and SnO2, In2O3 powders and CdIn2O4 and Cd2SnO4 films have some different shapes and positions. The O1s XPS peaks observed from CdIn2O4 and Cd2SnO4 films are changed with the oxygen concentration. and O1s peaks resolve into two peaks with increasing oxygen concentration.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1994年第3期257-261,共5页
Acta Energiae Solaris Sinica
基金
国家自然科学基金
关键词
薄膜
X-光电子
光电子能谱
CdIn_2O_4 fihns, Cd_2SnO_4 fihns, X-ray photoelectron spectroscopy
