摘要
为制备高输出性能的 α-Si∶H FET,本文运用电荷控制理论分析了器件的输出电流、开关比及场效应迁移率对材料和结构参数的依赖关系。根据分析结果设计并制备了沟道宽长比高达10~3的α-Si∶H MNS FET 样品,其输出电流达 mA 数量级。
In order to manufacture α-Si:H FET with high output performance,the relations between output current,on/off ratio,effective mobility of this device and materi-al and structure parameters are analyzed by charge controlled principle.According to theresults of analysis,the α-Si:H MNS FET samples are designed and manufactured.Thechannel width to length ratio of this sample is 10~3.Its output current rises to mA magni-tude.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1990年第6期606-613,共8页
Journal of University of Electronic Science and Technology of China
关键词
a-Si:HFET
电荷控制
沟道
输出电流
amorphous hydrogen silicon field-effect transistor
charge controlled principle
channel
output current
