摘要
采用溶胶 凝胶技术 ,在Pt/Ti/SiO2 /Si衬底上成功制备了沿 ( 1 0 0 )晶向强烈取向的Pb(Zr0 .5 3 ,Ti0 .47)O3 铁电薄膜 .通过X ray衍射分析 ,在每层膜的制备工序中 ,增加6 0 0℃热处理 1 5min的工艺 ,可有效防止烧绿石相的出现和薄膜开裂 ,并促进薄膜沿( 1 0 0 )晶向外延生长 .制得的薄膜经 6 0 0℃退火 4h后 ,呈完全钙钛矿相 ,并沿 ( 1 0 0 )晶向强烈取向 .原子力显微照片表明 ,薄膜结构致密 ,晶粒尺寸约为 1 0 0nm .经测量 ,薄膜的相对介电常数高达 1 1 50 ,剩余极化为 2 6 μc/cm2 ,矫顽场强为 4 9kV/cm .
s: Highly (100) oriented Pb(Zr 0.53 ,Ti 0.47 )O 3(PZT)ferroelectric films were prepared by sol gel method on Pt/Ti/SiO 2/Si substrate. Through X ray diffraction analysis, it was found that the introduction of 15 minute baking at 600 ℃ into heat treatment of each layer promotes the crystallization of pervoskite phase, avoids crack formation during heat treatment and increases the critical thickness of PZT films. After annealing at 600 ℃ for 4 hours, the as deposited PZT film exhibited only the perovskite phase and strongly oriented in pervoskite (100). Atomic force microscopy observation showed that the film exhibited dense microstructure and uniform grain size distribution of about 100 nm. The relative dielectric constant of the film, as high as 1 150, was measured. The film also exhibited excellent remanent polarization and coercive fields of 26 μc/cm 2 and 49 kV/cm, respectively.
基金
中科院"百人计划"资助项目
