摘要
随着光电探测工作波段向红外的转移,传统硅基图像传感器所涵盖的可见光及近红外波段的视觉信息已经不能满足空间遥感、工业监视等领域的使用需求,短波红外探测器凭借着其波段所包含的独特信息以及与可见光相机类似的反射式成像原理,正逐渐进入日益扩大的图像视觉应用领域当中。其中,InGaAs短波红外探测器由于高量子效率、高迁移率以及高灵敏度的应用优势,发展最为成熟。面对低照度成像以及多光谱成像等领域的使用需求,可见扩展-短波红外宽谱段InGaAs探测器成为重要的研究方向之一。目前常用的研制途径有两种,一是增加光吸收,二是采用新型异质结,前者可分为表层减薄处理和抗反射增透技术,而后者主要是指InGaAs与二维材料或者除InP之外的其他Ⅲ-V族材料等构成新型异质结探测器。本文归纳整理了国内外关于可见-短波红外宽谱段InGaAs探测器的发展情况,对有关InGaAs探测器的新结构和新工艺进行了阐述分析,并在最后总结和探讨了宽谱段InGaAs红外探测器的未来发展趋势。
With the shift of the photoelectric detection working band to infrared,the visual information in visible and near-infrared bands covered by traditional silicon-based image sensors can no longer meet the needs of space remote-sensing,industrial monitoring,and other fields.Shortwave infrared detectors are gradually entering the expanding application field of image vision by virtue of the unique information contained in their wavebands and the reflective imaging principle similar to that of visible cameras.Among these,the InGaAs shortwave infrared photodetector is the most mature and widely developed owing to its high quantum efficiency,mobility,and sensitivity.Visible extended-shortwave infrared broadband InGaAs photodetectors have become an important research direction to meet the demands of low-light-level and multispectral imaging.At present,there are two common development approaches:increasing the light absorption and adopting a new heterojunction.The former can be divided into surface thinning treatment and anti-reflection technology,whereas the latter mainly refers to InGaAs and two-dimensional materials or III-V materials other than InP to form a new heterojunction detector.In this study,the development of broadband InGaAs detectors in the VIS-SWIR spectrum both domestically and internationally is summarized,and the new structure and technology of InGaAs photodetectors are expounded and analyzed.Finally,future development trends in broadband InGaAs infrared detectors are summarized and discussed.
作者
齐浩泽
龚晓霞
朱琴
宋欣波
范明国
王紫祥
杨文运
QI Haoze;GONG Xiaoxia;ZHU Qin;SONG Xinbo;FAN Mingguo;WANG Zixiang;YANG Wenyun(Kunming Institute of Physics,Kunming 650223,China)
出处
《红外技术》
北大核心
2026年第3期267-279,共13页
Infrared Technology
关键词
短波红外
INGAAS
可见光扩展
宽谱段响应
增加光吸收
shortwave infrared
InGaAs
visible light extension
broadband response
increase light absorption
