摘要
全球算力需求的爆炸式增长与冯·诺依曼架构瓶颈的制约,使传统计算架构面临严峻挑战,存算一体技术成为解决困境的重要路径之一。在众多存算一体技术路线中,基于RRAM新型存算技术以高能效与高集成度等优势脱颖而出,并在小规模阵列和原型芯片方面取得重要进展。然而,受限于传统集成技术,阻变随机存储器(RRAM)芯片在集成密度方面难以满足未来更高算力需求下的高能效与实时性应用场景。三维异构集成技术通过垂直互连与分层整合方式,有望突破平面集成密度瓶颈,推动超高密度RRAM存算一体芯片的发展。本文围绕基于三维异构集成技术的RRAM存算一体芯片研究进展,重点介绍了硅通孔(TSV)和单片三维(M3D)集成两种主流技术路线,分析了集成工艺和系统级兼容性等关键问题,讨论了面临的挑战与未来发展方向。本文为高密度三维异构RRAM存算一体技术的研究与应用提供了新思路。
The conventional von Neumann architecture increasingly limits the computing efficiency with the growing demand for computation requirement.To overcome these computing bottlenecks,computing-in-memory(CIM)technologies have therefore emerged as a promising approach.Among various CIM technology,resistive random-access memory(RRAM)-based CIM is regarded as the next-generation computing architecture due to its high energy efficiency and scalability,which has been demonstrated in small scale arrays and prototype chips.However,RRAM-based CIM hardly meets the requirements of future high-performance computing because of the limited integration level of traditional technology.Three-dimensional(3D)heterogeneous integration provides a potential solution by enabling ultra-high integration density through vertical interconnections and layer stacking for enhancing computing performance.In this review,we focus on the key fabrication challenges,system-level compatibility issues and outline prospects of RRAM architectures based on through-silicon via(TSV)and monolithic three-dimensional(M3D)integration.This work aims to provide insights that support the advancement of high-density 3D heterogeneous RRAM-based CIM technologies.
作者
杨道虹
马国坤
程乾
刘淑娟
王浩
YANG Dao-hong;MA Guo-kun;CHENG Qian;LIU Shu-juan;WANG Hao(Hubei Yangtze Memory Laboratories;School of Integrated Circuit,Hubei University)
出处
《中国集成电路》
2026年第3期17-24,共8页
China lntegrated Circuit
基金
国家自然科学基金企业创新发展联合基金集成项目(U24B6015)
湖北省自然科学基金青年A类项目(2025AFA118)
湖北省重大科技攻关项目(2023BAA009)
武汉东湖新技术开发区“揭榜挂帅”项目(2023KJB202)。
关键词
存算一体芯片
阻变存储器
异构集成
硅通孔
单片三维集成
computing-in-memory(CIM)
resistive random-access memory(RRAM)
three-dimensional(3D)heterogeneous integration
through-silicon via(TSV)
monolithic three-dimensional(M3D)integration
