摘要
三维硅通孔转接板封装结构中,存在大量的微凸点与微焊球,尺寸相差3个数量级,这种结构多尺度给有限元分析模型的建立带来困难。以板级封装焊锡接点热疲劳寿命的有限元计算为目标,采用均匀化方法将芯片与转接板间的微凸点/下填料层以及转接板与基板间的微焊点/下填料层等效为均匀介质,以解决结构多尺度带来的网格划分困难。在对比分析了几种均匀化方案的基础上,建议在计算三维硅通孔转接板板级封装焊锡接点的热疲劳寿命时,芯片与转接板间的微凸点/下填料层以及转接板与基板间的微焊点/下填料层可采用各自的下填料层替代建模。
In 3D through-silicon-via （TSV） interposer packages, there are many micro bumps and micro solder balls, the size of which might be different by 1000 times. This multi-scale structure brings difficulties in building the finite element model. Homogenization method was adopted to avoid these difficulties in this paper. The micro bump/underfill layer between the chip and the TSV interposer, and the micro solder ball/underfill layer between the interposer and the substrate were replaced by homogenous material layers. Four different homogenization schemes were proposed to compute the thermal fatigue life of the board level solder joints, and the results were compared. It is suggested that the micro bump/underfill layer between the chip and the interposers, and the micro solder ball/underfill layer between the interposer and the substrate can be replaced by their own underfill material layer in a finite element analysis of the thermal fatigue life of board level solder joints.
出处
《工程力学》
EI
CSCD
北大核心
2015年第10期191-197,共7页
Engineering Mechanics
基金
国家自然科学基金项目(11272018)
国家科技重大专项项目(2014ZX02502-004)
关键词
硅通孔转接板
结构多尺度
均匀化方法
有限元模型
热疲劳寿命
TSV interposer
multi-scale structure
homogenization method
finite element modeling
thermalfatigue life
