摘要
本文探讨了碲锌镉(CdZnTe)晶体的夹杂缺陷、红外透射光谱特性和电阻率三者之间的相关性。采用垂直布里奇曼法生长碲锌镉单晶体,经切片、机械磨抛、化学机械抛光等工序获得双面抛光的晶片,对晶片的腐蚀形貌、夹杂缺陷、近红外透射光谱进行了检测分析,采用化学法在晶片上、下表面镀金电极并测试晶片的电阻率。研究结果表明,夹杂密度与电阻率之间具有相关性,且富碲和富镉晶片在I-V特性上表现出显著差异。在富碲晶片中,晶片的电阻率随碲夹杂密度的增大而升高;在富镉晶片中,当晶片电阻率大于10^(9)Ω·cm时,晶片电阻率随镉夹杂密度的增大而升高。
The correlation between the inclusion defects,infrared transmission spectroscopy characteristics and resistivity of cadmium zinc tellurium(CdZnTe)crystals was discussed in this paper.The CdZnTe single crystals were grown by the vertical Bridgman method,and the double-sided polished wafers were prepared by slicing,mechanical grinding and polishing,chemical mechanical polishing and other processes.The corrosion morphology,inclusion defect and near-infrared transmission spectroscopy of the wafers were detected and analyzed,and the gold contacts were plated on the upper and lower surfaces of the wafers by chemical method and the resistivity of the wafers were tested.The results show that there is a correlation between the inclusion density and resistivity,and the tellurium-rich and cadmium-rich wafers show significant differences in I-V characteristics.In tellurium-rich wafers,the resistivity of the wafers increases with the increase of tellurium inclusion density.In cadmium-rich wafers,when the resistivity of the wafers exceeds 10^(9)Ω·cm,the resistivity increases with the higher tellurium inclusion density.
作者
张恒
刘从峰
袁宁一
孙士文
ZHANG Heng;LIU Congfeng;YUAN Ningyi;SUN Shiwen(School of Materials Science and Engineering,Changzhou University,Changzhou 213164,China;Jiangsu Photovoltaic Science and Engineering Collaborative Innovation Center,Changzhou 213164,China;Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Sun-Chip(Changzhou)Sensor Technology Co.,Ltd.,Changzhou 213164,China)
出处
《人工晶体学报》
北大核心
2025年第11期1923-1930,共8页
Journal of Synthetic Crystals
关键词
碲锌镉
碲夹杂
镉夹杂
夹杂密度
电阻率
红外透射光谱
CdZnTe
Te inclusion
Cd inclusion
inclusion density
resistivity
infrared transmittance spectrum
