摘要
化学抛光是碲锌镉衬底抛光工艺中的最后一步,化学抛光后衬底的表面状态决定着碲镉汞的外延质量。本文研究了使用碘甲醇进行碲锌镉衬底的化学抛光工艺,从抛光盘转速、碘甲醇浓度和在溶液中是否添加乙二醇三方面对化学抛光工艺的影响。结果表明,使用浓度为001mol/L的碘甲醇,并添加乙二醇,设置抛光盘转速为20 rpm作为抛光参数获得的碲锌镉衬底粗糙度最小,为077nm。采用碘甲醇作为化学抛光液比常用的溴甲醇更容易进行过程控制,并且抛光后衬底表面的富碲情况更少,更适用于碲镉汞外延前衬底的表面处理。
Chemical polishing is the last step in the polishing process of Cadmium zinc telluride(CdZnTe)substrate.The epitaxial quality of HgCdTe depends on the surface state of the substrate after chemical polishing.In this paper,the chemical polishing process of CdZnTe substrate using iodomethanol is studied.The influences of the rotating speed of the polishing disc,the concentration of iodine methanol and the addition of ethylene glycol to the solution are studied.The results show that the minimum roughness of CdZnTe substrate is 0.77 nm by using 0.01 mol/L iodine methanol,adding ethylene glycol and setting the rotating speed of the polishing disc to 20 rpm.Compared with the commonly used bromine methanol solution,iodine methanol as the chemical polishing solution is easier to control during the process.Moreover,less tellurium enrichment is observed on the substrate surface after polishing,making it more suitable for surface treatment of substrates prior to HgCdTe epitaxy.
作者
王琰璋
李振兴
刘江高
岳晓辉
李乾
WANG Yan-zhang;LI Zhen-xing;LIU Jiang-gao;YUE Xiao-hui;LI Qian(The 11th Research Institute of CETC,Beijing 100015,China)
出处
《激光与红外》
北大核心
2025年第10期1577-1580,共4页
Laser & Infrared
关键词
碘甲醇
化学抛光
碲锌镉
乙二醇
iodine methanol
chemical polishing
cadmium zinc tellurium
ethylene glycol
