摘要
单粒子翻转(single event upset,SEU)是影响航天器可靠性的关键因素之一。为了提升航天器的抗辐射能力,地面实验常采用离子或激光来模拟SEU效应,并对器件进行加固设计。然而,这两种实验方法的等效性尚未得到充分验证。本文基于热峰模型,模拟了离子和激光入射到硅材料后电子和晶格温度随时间的演化行为,并对比分析了两者的差异。研究结果表明:离子入射产生的自由电荷在空间分布上呈现柱状分布,具有轴对称性;而激光入射则沿入射方向呈现梯度分布。离子激发自由电荷的时间尺度受电子热平衡时间影响,激光诱发的自由电荷受激光脉冲宽度影响。离子和激光诱发的单粒子翻转激发的电荷时空分布存在差异,导致二者对不同器件类型的适用性有所区别,这为SEU效应的实验研究提供了重要见解。
Single event upset(SEU)is one of the critical factors affecting the reliability of spacecraft.To enhance the reliability of spacecraft,ground-based experiments often employ ions or lasers to simulate the SEU effects for devices testing and hardening.However,the physical equivalence of these two experimental methods remains insufficently validated.This study utilizes the thermal spike model to simulate the evolution of electrons and lattice temperatures in silicon under ion and laser irradiation,conducting comparative analyses of their differences.The results show that the free charge generated by ion incidence exhibits a cylindrical distribution in space,with axial symmetry,whereas,laser irradiation induces a gradient distribution along the incident direction.The timescale of free charge excited by ion excitation is influenced by the electron thermal equilibrium time,while the free charge excited by laser-induced excitation is affected by the width of the laser pulse.These differences in the spatiotemporal distribution of charges excited by ion and laser-induced SEU lead to varying applicability to different device types,providing important insights for the experimental study of SEU effects.
作者
陈宁
潘玉贺
安恒
张晨光
李昊
赵江涛
张硕
彭海波
CHEN Ning;PAN Yuhe;AN Heng;ZHANG Chenguang;LI Hao;ZHAO Jiangtao;ZHANG Shuo;PENG Haibo(School of Nuclear Science and Technology,Lanzhou University;MOE Frontier Science Center for Rare Isotopes;Lanzhou Institute of Physics,Lanzhou 730000,China)
出处
《现代应用物理》
2025年第5期158-165,共8页
Modern Applied Physics
基金
甘肃省科技重大专项资助项目(22ZD6GA011)。
关键词
单粒子翻转
热峰模型
LET
双电子共振吸收模型
single event upset
thermal spike model
LET
two electron resonance absorption model
