摘要
碳杂质含量过高是原子层沉积(ALD)氧化钇薄膜领域中的一个关键技术难题。设计合成了钇配合物Y(tmod)_(3)(tmod=2,2,6,6-四甲基-3,5-辛二酮),热重(TG)分析和差示扫描量热(DSC)测试结果表明,含有不对称配体的Y(tmod)_(3)前驱体表现出比已报道的Y(tmhd)_(3)(tmhd=2,2,6,6-四甲基-3,5-庚二酮)更低的熔点、更高的挥发性和优异的热稳定性,是理性的ALD前驱体。以二者作为钇前驱体,O_(3)为氧源,利用ALD技术制备了氧化钇薄膜。实验结果表明,Y(tmod)_(3)前驱体的薄膜饱和生长速率为0.29Å/cycle(1Å=0.1 nm),显著高于Y(tmhd)_(3)的0.23Å/cycle。采用原子力显微镜(AFM)、扫描电子显微镜(SEM)和X射线光电子能谱仪(XPS)对薄膜进行表征。结果表明薄膜表面光滑均匀,具有优异的表面形貌和高纯度特性,其中Y(tmod)_(3)前驱体的薄膜碳杂质原子数分数低至0.18%,显著低于Y(tmhd)_(3)的0.83%。
Excessive carbon impurity content is a key technical challenge in the field of atomic layer deposition(ALD)yttrium oxide thin films.Yttrium complex Y(tmod)_(3)(tmod=2,2,6,6-tetramethyl-3,5-octanedione)was designed and synthesized,and the results of thermogravimetric(TG)analysis and differential scanning calorimetry(DSC)tests indicate that the Y(tmod)_(3)precursor containing asymmetric ligands shows a lower melting point and higher volatility and excellent thermal stability than that of the reported Y(tmhd)_(3)(tmhd=2,2,6,6-tetramethyl-3,5-heptanedione),making it a rational ALD precursor.Yttrium oxide thin films were prepared by ALD technique using both compounds as yttrium precursors and O_(3)as oxygen source.The experimental results show that the saturation growth rate of the films with Y(tmod)_(3)as precursor is 0.29Å/cycle(1Å=0.1 nm),which is significantly higher than that of 0.23Å/cycle for Y(tmhd)_(3).The films were characterized using atomic force microscopy(AFM),scanning electron microscopy(SEM)and X-ray photoelectron spectroscopy(XPS).The results show that the films have smooth and uniform surfaces with excellent surface morphology and high purity properties,in which the carbon impurity atomic fraction of the film with Y(tmod)_(3)as precursor is as low as 0.18%,which is significantly lower than that of 0.83%for Y(tmhd)_(3).
作者
张新强
丁玉强
Zhang Xinqiang;Ding Yuqiang(School of Chemical and Material Engineering,Jiangnan University,Wuxi 214122,China)
出处
《微纳电子技术》
2025年第9期89-101,共13页
Micronanoelectronic Technology
关键词
对称配体
钇前驱体
原子层沉积(ALD)
高纯度
氧化钇薄膜
asymmetric ligand
yttrium precursor
atomic layer deposition(ALD)
high-purity
yttrium oxide thin film
