摘要
提出了一种基于电化学腐蚀的单晶碳化硅(SiC)化学机械抛光方法。通过电化学实验研究不同条件下H_(2)O_(2)的腐蚀电流,发现当H_(2)O_(2)浓度为5%时,腐蚀电流最大。在碱性条件下(pH=11.62),H_(2)O_(2)活化程度较高,能够有效生成活性氧自由基。为了提高氧化性,加入Na_(2)SiO_(3)和MgSO_(4)两种稳定剂,其中MgSO_(4)对腐蚀电流的提升尤为显著。实验表明,加入2 mmol MgSO_(4)后,H_(2)O_(2)稳定性显著提高,且SiC表面出现大面积氧化区域。经过2 h的抛光实验,含MgSO_(4)的抛光液使SiC的材料去除率(MRR)达到264 nm/h,较纯H_(2)O_(2)提升11.4倍,抛光后的表面粗糙度为3.7 nm,表面光滑无明显划痕。
This article proposes a chemical mechanical polishing method for single crystal silicon carbide(SiC)based on electrochemical corrosion.Through electrochemical experiments,the corrosion current of H_(2)O_(2)under different conditions was stud⁃ied,and it was found that the maximum corrosion current occurs when the concentration of H_(2)O_(2)is 5%.Under alkaline conditions(pH=11.62),H_(2)O_(2)is highly activated and can effectively generate reactive oxygen species.In order to improve oxidation,two sta⁃bilizers,Na_(2)SiO_(3)and MgSO_(4),were added,with MgSO_(4)showing a particularly significant increase in corrosion current.Experi⁃ments have shown that after adding 2 mmol of MgSO_(4)significantly improves the stability of H_(2)O_(2),and large areas of oxidation ap⁃pear on the SiC surface.Aftera 2hour polishing experiment,the polishing solution containing MgSO_(4)achieved a material removal rate(MRR)of 264 nm/h for SiC,which was 11.4 times higher than that of pure H_(2)O_(2).The surface roughness after polishing was 3.7 nm,and the surface was smooth without obvious scratches.
作者
王凯悦
白九伟
武海涛
吕功
刘桐
张泽芳
WANG Kai-yue;BAI Jiu-wei;WU Hai-tao;LV Gong;LIU Tong;ZHANG Ze-fang(School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan Shanxi 030024,China;Shanghai Yingzhi Grinding Materials Co.,Ltd.,Shanghai 201700,China)
出处
《铸造设备与工艺》
2025年第4期21-28,共8页
Foundry Equipment & Technology
基金
国家自然科学基金项目(U21A2073)
山西省科技重大专项揭榜挂帅项目(2023010302011003)。
