摘要
We investigate the impact of high-energy O ions on the occurrence of single-event burnout(SEB) in silicon carbide(Si C) metal–oxide–semiconductor field-effect transistors(MOSFETs) under various bias conditions. Through a combination of SRIM, GEANT4, and TCAD simulations, we explore the role of secondary ions generated by nuclear reactions between high-energy O ions and Si C materials. These secondary ions, with significantly higher linear energy transfer(LET) values, contribute to electron–hole pair generation, leading to SEB. Our results show that the energy deposition and penetration depth of these secondary ions, especially those with high LET, are sufficient to induce catastrophic SEB in Si C MOSFETs. The study also highlights the critical influence of reverse bias voltage on SEB occurrence and provides insights into the failure mechanisms induced by nuclear reactions with high-energy O ions. This work offers valuable understanding for improving the radiation resistance of Si C-based power devices used in space and high-radiation environments,contributing to the design of more reliable electronics for future space missions.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019 and 62234013)
the National Key Research and Development Program of China(Grant Nos. 2023YFA1609000 and 2022YFB3604001)。
