摘要
针对在ESD防护中的系统设计对数据接口的传输速率与信号频率越来越高的要求,基于0.5μm BCD工艺,设计了一种具备低触发电压和低电容的双向SCR器件(LCDDSCR)。相较于常规的传统双向SCR器件结构(DDSCR),LCDDSCR结构采用临界扩散技术减小了P-well区的面积,实现了器件输入电容的降低。基于SCR器件的齐纳触发特性,通过临界齐纳注入技术引入ZP区使得器件的触发电压降低。传输线脉冲(TLP)测试与电容测试结果表明,LCDDSCR器件的触发电压为7.5 V,维持电压为1.5 V,结电容为0.53 pF,浪涌峰值电流达7 A,即0.53 pF/7 A,满足ESD防护要求的同时具备优秀的低电容与低触发电压特性。
A bidirectional SCR device(LCDDSCR)with low trigger voltage and low capacitance has been designed to meet the increasing demands of system design for ESD protection,particularly in relation to the transmission rate and signal frequency of data interfaces,based on a 0.5μm BCD process.Compared to the conventional bi-directional SCR device structure(DDSCR),the LCDDSCR structure employs the critical diffusion technique to reduce the area of the P-well region,thereby lowering the device's input capacitance.Additionally,the ZP region is introduced using the critical Zener injection technique to reduce the trigger voltage,based on the Zener triggering characteristics of the SCR device.Transmission line pulse(TLP)test and capacitance test results show that the LCDDSCR device has a trigger voltage of 7.5 V,a sustaining voltage of 1.5 V,a junction capacitance of 0.53 pF,and a peak inrush current of 7 A(0.53 pF/7 A),which satisfies the requirements for ESD protection and exhibits excellent low capacitance and low trigger voltage characteristics.
作者
马超
贾义睿
齐钊
陈泓全
魏敬奇
张波
MA Chao;JIA Yirui;QI Zhao;CHEN Hongquan;WEI Jingqi;ZHANG Bo(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,P.R.China)
出处
《微电子学》
北大核心
2025年第1期147-152,共6页
Microelectronics
基金
中国博士后科学基金资助项目(2021M700684)
重庆市自然科学基金面上资助项目(cstc2021jcyj-msxmX1023)。
