摘要
手机等电子设备的电池模块VBAT&VBUS端由于工作电压多样和应用环境的电应力强,需要其保护器件TVS提供适应4.5/7/12/15/18/24/26 V电源电压。并且在配合OVP的保护方案时,不仅要求TVS击穿方向具有高功率密度低钳位电压的特点,对正向导通方向也提出了耐大电流冲击和低钳位电压的要求。分析PN结单向二极管和NPN结双向二极管的静态I-V特性和动态浪涌残压特性,开发了结合两种结构优点的TVS器件,该器件在提供低漏电流的同时可降低击穿电压,其峰值电流IPP大幅度提升,钳位电压VC也下降到被保护器件的安全区内。
The operating voltage and electrical stress of application environment from VBAT & VBUS terminal of battery module of electronic devices like mobile phones,needs TVS providing appropriate 4.5/7/12/15/18/24/26 V power voltage and coordinating OVP solutions,which not only requires the TVS breakdown direction has high power density and low clamping voltage,but also requires forward direction has high current shock resistance and low clamping voltage.This article analyzed the character of breakdown voltage,surge current and clamping voltage of PN and NPN Junction.And developed a new TVS structure combined with both advantages,which can reduce the breakdown voltage while providing low leakage current,and its peak current IPP will greatly enhanced,and clamping voltage VC also reduce into the safety area of protected devices.
作者
苏海伟
赵德益
吕海凤
王允
赵志方
SU Haiwei;ZHAO Deyi;LYU Haifeng;WANG Yun;ZHAO Zhifang(Shanghai CYG Wayon Microelectronics Co.Ltd,Shanghai 201202,China)
出处
《集成电路应用》
2019年第2期35-37,共3页
Application of IC
基金
上海市中小企业科技创新课题项目
关键词
瞬态电压抑制
TVS
电池端口保护
高功率密度
低钳位电压
Transient Voltage Suppressor
TVS
battery port protection
high power density
low clamping voltage
