摘要
为探究化学机械抛光过程中工艺参数对铝酸镁钪晶片抛光效果的影响,该文研究了抛光压力、抛光盘转速和抛光液流量3个工艺参数在化学机械抛光过程中对晶片表面材料去除的作用规律。结果表明:适当提高抛光压力、抛光盘转速和抛光液流量有利于提高晶片的材料去除率和表面质量,其中抛光压力的影响最大,抛光盘转速次之,抛光液流量最小。此外,过高的抛光压力会导致晶片表面材料发生解理并出现片状剥离。因此,选择抛光压力0.2 kg/cm^(2)、抛光盘转速70 r/min、抛光液流量200 mL/min作为抛光工艺参数,铝酸镁钪晶片的材料去除率达到了5.73μm/h,且表面粗糙度值仅为1.49 nm,实现了高材料去除率的同时获得了高质量晶片表面。
In order to study the influence of the process parameters on the chemical mechanical polishing results of ScAlMgO_(4)wafer,the effects of the polishing pressure,speed of pad and flow rate of slurry was studied.The results show that the proper increase in polishing pressure,speed of pad and flow rate of slurry is beneficial to improve the material removal rate and surface quality of the wafer,and the polishing pressure has the greatest influence,followed by the speed of pad and flow rate of slurry.In addition,too high polishing pressure will lead to surface material cleave and flake peeling.Therefore,the polishing process parameters of 0.2 kg/cm^(2),70 r/min and 200 mL/min were chosen,and ScAlMgO_(4)wafer achieved a high material removal rate of 5.73μm/h and a surface roughness value of only 1.49 nm,realizing a high quality wafer surface with a high material removal rate.
作者
倪自丰
季明捷
陈国美
张海涛
李俊杰
卞达
钱善华
NI Zifeng;JI Mingjie;CHEN Guomei;ZHANG Haitao;LI Junjie;BIAN Da;QIAN Shanhua(School of Mechanical Engineering,Jiangnan University,Wuxi 214122,Jiangsu,China;Jiangsu Province Engineering Research Center of Micro-Nano Additive and Subtractive Manufacturing,Wuxi 214122,Jiangsu,China;School of Mechanical and Electrical Engineering,Wuxi Vocational Institute of Commerce,Wuxi 214153,Jiangsu,China;Wuxi Wuyue Semiconductor Co.,Ltd.,Wuxi 214115,Jiangsu,China)
出处
《机械科学与技术》
北大核心
2025年第3期477-483,共7页
Mechanical Science and Technology for Aerospace Engineering
基金
国家自然科学基金项目(52205196)
江苏省高校青蓝工程项目(2021)。
关键词
铝酸镁钪
解理材料
化学机械抛光
工艺参数
ScAlMgO_(4)
cleaved materials
chemical mechanical polishing
process parameters
