摘要
第三代半导体材料,如SiC和GaN,因其卓越的性能在电力电子领域展现出巨大潜力。为了充分发挥材料的优势,需要通过先进的封装技术来解决电气互连、机械支撑和散热等问题。围绕第三代半导体封装结构的研究进展,从降低寄生电参数、降低热阻、提高集成度3个发展方向分类总结近年来新型封装结构特点及优化效果。基于新型封装结构,总结了其面临的可靠性问题以及现行的可靠性测试标准和方法,探讨了存在的问题和不足,对第三代半导体封装技术的未来发展进行了展望。
Third-generation semiconductor materials,such as SiC and GaN,demonstrate significant potential in power electronics due to their excellent properties.In order to fully exploit the advantages of these materials,advanced packaging technologies are essential to tackle challenges in electrical interconnections,mechanical support,and thermal management.Focusing on the research progress of third-generation semiconductor packaging structures,the characteristics and optimization effects of the new packaging structures in recent years are classified and summarized,focusing on three development directions of minimizing parasitic electrical parameters,reducing thermal resistance,and enhancing integration levels.Based on the new packaging structures,the reliability problems and the current reliability testing standards and methods are summarized,the existing problems and shortcomings are discussed,and the future developing trends of packaging technology for third-generation semiconductors are prospected.
作者
郑佳宝
李照天
张晨如
刘俐
ZHENG Jiabao;LI Zhaotian;ZHANG Chenru;LIU Li(School of Material Science and Engineering,Wuhan University of Technology,Wuhan 430074,China)
出处
《电子与封装》
2025年第3期32-46,共15页
Electronics & Packaging
基金
中国科协科技智库青年人才计划(XMSB20240710047)
武汉市知识创新专项曙光计划(2023010201020320)。
关键词
第三代半导体
功率器件
封装结构
可靠性评估
third-generation semiconductor
power device
packaging structure
reliability evaluation
