摘要
基于烧结银作为芯片互连层的双面散热SiC半桥模块,改变芯片顶面与基板的烧结银连接层形状为片状、圆柱阵列和长方体阵列,进行了散热和热应力仿真。仿真结果表明,得益于烧结银较高的热导率,改变烧结银层的形状对散热性能影响很小。相比于片状烧结银互连模块,采用圆柱阵列和长方体阵列烧结银互连的模块,其结温最大仅升高0.2℃和0.14℃。由于阵列模型中的烧结银互连层通过多个微小连接点有效分散和缓解了热应力,圆柱阵列和长方体阵列的烧结残余热应力和工作热应力都显著降低,圆柱阵列模型的烧结残余热应力和工作热应力降低了8.57%和3.16%,长方体阵列模型的烧结残余热应力和工作热应力降低了8.57%和37.71%,并且可通过缩小烧结银面积来降低成本,具有较高的科研和应用价值。
Based on the double-sided heat dissipation SiC half-bridge module with sintered silver as the chip interconnect layer,the shapes of sintered silver interconnect layer between the top surface of the chip and the substrate are changed into sheet,cylindrical array,and cuboid array,the heat dissipation and thermo-mechanical stress are simulated.The simulation results show that due to the high thermal conductivity of sintered-silver,shape change of sintered silver layer has little effect on the heat dissipation performance.Compared with that of the sheet sintered silver interconnection module,the junction temperatures of the modules with cylindrical array and cuboid array sintered silver interconnections are only increased by a maximum of 0.2℃and 0.14℃.Due to the effective dispersion and relief of thermal stress through multiple small connection points in the sintered silver interconnect layer of the array model,the residual thermal stress and working thermal stress of cylindrical and cuboid arrays are significantly reduced.The sintering residual thermal stress and working thermal stress of cylindrical array model are reduced by 8.57%and 3.16%,and the sintering residual thermal stress and working thermal stress of cuboid array model are reduced by 8.57%and 37.71%.And the cost of sintered silver can be reduced by reducing the sintered silver area,which has certain scientific research value and application significance.
作者
逄卓
赵海强
徐涛涛
张浩波
王美玉
PANG Zhuo;ZHAO Haiqiang;XU Taotao;ZHANG Haobo;WANG Meiyu(College of Electronic Information and Optical Engineering,Nankai University,Tianjin 300350,China;Tianjin Aviation-Mechanical Co.,Ltd.,Tianjin 300308,China;Shenzhen Research Institute,Nankai University,Shenzhen 518083,China;Tianjin Key Laboratory of OptoelectronicSensor and Sensing Network Technology,Tianjin 300350,China)
出处
《电子与封装》
2025年第3期25-31,共7页
Electronics & Packaging
基金
国家自然科学基金(52107198)
广东省自然科学基金(2023A1515011854)
南开大学中央高校基本科研业务费专项资金(63231154,63241330)。
关键词
双面散热模块封装
烧结银
阵列
散热
热应力
double-sided heat dissipation module packaging
sintered silver
array
heat dissipation
thermal stress
