摘要
模拟了处在一定功率密度或不同温度下封装结构贴片的形变引起的X波段MEMS开关芯片的形变,从而导致的开关芯片性能的变化。用Coventor软件模拟出在开关衬底为200μm,贴片处功率密度为300pW/μm2时,开关芯片的形变量为0.142μm;开关衬底为300μm,温度为373K时,开关芯片的形变量为0.791μm。进一步用HFSS模拟出开关的插入损耗在中心频率10GHz处由封装前的0.042dB和0.022dB变化为封装后的0.078dB和0.024dB。
The displacement of x-band MEMS switch chip caused by the displacement of package structure dietop is simulated under a certain heatflux, and changes of properties at different temperatures. When the swith subsrate is 200 μm, heatflux of the dietop is 300 pW/μm^2, the switch displacement simulated by Coventor is 0.142 μm; when the swith substrate is 300 μm and the temperature is 373 K, the switch displacement is 0.791μm. Then further simulation was done using HFSS, the insertion loss of the switch is 0.042 dB and 0.022 dB without package, changed to 0.078 dB and 0.024 dB with package at the center frequency 10 GHz.
出处
《微纳电子技术》
CAS
2006年第6期293-297,共5页
Micronanoelectronic Technology
