摘要
To realize room temperature ferromagnetic(FM)semiconductors is still a challenge in spintronics.Many antiferromagnetic(AFM)insulators and semiconductors with high Neel temperature TN are obtained in experiments,such as LaFeO_(3),BiFeO_(3),etc.High concentrations of magnetic impurities can be doped into these AFM materials,but AFM state with very tiny net magnetic moments was obtained in experiments because the magnetic impurities were equally doped into the spin up and down sublattices of the AFM materials.Here,we propose that the effective magnetic field provided by a FM substrate could guarantee the spin-dependent doping in AFM materials,where the doped magnetic impurities prefer one sublattice of spins,and the ferrimagnetic(FIM)materials are obtained.To demonstrate this proposal,we study the Mn-doped AFM insulator LaFeO_(3)with FM substrate of Fe metal by the density functional theory(DFT)calculations.
基金
supported by the National Key R&D Program of China(Grant No.2022YFA1405100)
National Natural Science Foundation of China(Grant No.12074378)
Chinese Academy of Sciences(Grants No.YSBR-030,No.JZHKYPT-2021-08,No.XDB33000000).
