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Ferromagnetism at 230 K in(Ba_(0.7)K_(0.3))(Zn_(0.85)Mn_(0.15))_2As_2 diluted magnetic semiconductor 被引量:10

Ferromagnetism at 230 K in(Ba_(0.7)K_(0.3))(Zn_(0.85)Mn_(0.15))_2As_2 diluted magnetic semiconductor
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摘要 We report the ferromagnetism with Cure temperature Tcat 230 K in a new diluted magnetic semiconductor(DMS)(Ba0.7K0.3)(Zn0.85Mn0.15)2As2isostructural to ferropnictide 122 superconductors synthesized via low temperature sintering.Spin is doped by isovalence substitution of Mn2+for Zn2+,while charge is introduced by heterovalence substitution of K1+for Ba2+in(Ba0.7K0.3)(Zn0.85Mn0.15)2As2DMS,being different from(Ga,Mn)As where both spin&charge are induced simultaneously by heterovalence substation of Mn2+for Ga3+.The(Ba0.7K0.3)(Zn0.85Mn0.15)2As2DMS shows spontaneous magnetization following T3/2dependence expected for a homogeneous ferromagnet with saturation moment 1.0μB for each Mn atom. We report the ferromagnetism with Cure tem- perature Tc at 230 K in a new diluted magnetic semiconductor (DMS) (Ba0.7K0.3)(Zn0.85Mn0.15)2As2 isostructural to ferropnictide 122 superconductors synthesized via low temperature sintering. Spin is doped by isovalence substitution of Mn2+for Zn2+, while charge is introduced by heterovalence substitution of Kl+ for Ba2+ in (Ba0.7K0.3)(Zn0.85Mn0.15)2As2 DMS, being different from (Ga,Mn)As where both spin & charge are induced simultaneously by heterovalence substation of Mn2+ for Ga3+. The (Ba0.7K0.3)(Zn0.85Mn0.15)2As2 DMS shows spontaneous magnetization following T3/2 dependence expected for a homogeneous ferromagnet with saturation moment 1.0μB for each Mn atom
出处 《Chinese Science Bulletin》 SCIE EI CAS 2014年第21期2524-2527,共4页
基金 supported by the National Natural Science Foundation of China the Ministry of Science and Technology (MOST) of China
关键词 稀磁半导体 铁磁性 DMS ZnO 固化温度 烧结合成 自发磁化 饱和磁矩 Diluted magnetic semiconductors Decoupled spin charge doping High Curie temperature
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