摘要
文章在工艺温度1150~1350℃区间对化学气相沉积(CVD)技术制备SiC薄膜的密度和硬度、沉积速率、膜层表面形貌、碳化硅微观结构,以及膜层和基体结合强度作了系统性探究,结果显示1250℃下膜层表面形貌光滑、膜层致密、与基体结合性能良好,膜层由β-SiC组成,并具有优良的硬度与导热性。
The article systematically explores the density and hardness,deposition rate,surface morphology of the film layer,microstructure of silicon carbide,and the bonding strength between the film layer and the substrate in the temperature range of 1150-1350°C for the preparation of SiC thin films by chemical vapor deposition(CVD)technology.The results show that the surface morphology of the film layer is smooth,the flm layer is dense,and the bonding performance with the substrate is good at 1250°C.The film layer is composed ofβ-SiC and has excellent hardness and thermal conductivity.
作者
王力
李靖晗
李华民
包根平
张慧
WANG Li;LI Jinghan;LI Huamin;BAO Genping;ZHANG Hui(Beijing E-Pro Precision Semiconductor Co.,Ltd.,Beijing 102600,China)
关键词
碳化硅
化学气相沉积
工艺温度
沉积速率
界面结合
silicon carbide
chemical vapour deposition
process temperature
deposition rate
interfacial bonding
