摘要
以原子层低温沉积技术(ALD)制备的氧化锌(ZnO)作为薄膜晶体管载流子传输层,将其与光电敏感性极高的CsPbBrI_(2)全无机钙钛矿薄膜复合进一步研制出光电晶体管用于光电探测。氧化锌薄膜晶体管可在150℃低温条件下制备且无需高温退火,同时,CsPbBrI_(2)钙钛矿薄膜也可以在低温工艺下制备。结果显示,CsPbBrI_(2)/ZnO光电探测器表现出较好的性能,可对365 nm至600 nm波长的光辐射有光响应。在500 nm波长的光照射下,最大响应度和探测率分别可达2×10^(3)A/W和3×10^(14)Jones。CsPbBrI_(2)/ZnO光电晶体管的瞬态响应显示出250 ms的上升时间和200 ms的下降时间,并且在长时间测量后瞬态行为保持不变。
ZnO thin film was prepared by atomic layer deposition(ALD)and furtherly used as the carrier transport layer of thin film transistors.The phototransistor was fabricated and used in photo detection by combining the ZnO with particular CsPbBrI_(2)all inorganic perovskite to form hybrid film because of its excellent optical properties.ZnO thin film in the transistors could be prepared at relatively low temperature of 150℃without furtherly high temperature annealing,and simultaneously the CsPbBrI_(2)perovskite films could also be formed by a low temperature process.The photodetector exhibited a good response to the light in a wide wavelength range between 365 nm and 600 nm.When exposed to the light irradiation of 500 nm wavelength,the optimized responsivity of 2×10^(3)A/W and detectivity of 3×10^(14)Jones were achieved,respectively.The transient response of CsPbBrI_(2)/ZnO phototransistor also delivered a rise time of 250 ms and a fall time of 200 ms,and there remained ultrahigh stability in the transient behavior even after a long-time measurement.
作者
龚智鹏
杨尊先
郭太良
GONG Zhipeng;YANG Zunxian;GUO Tailiang(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,CHN)
出处
《光电子技术》
CAS
2022年第4期274-279,共6页
Optoelectronic Technology
基金
国家自然科学基金项目(61574039)
福建省自然基金项目(2015J01252)
国家科技部重点研发计划项目(2016YFB0401503,2016YFB0401305,2016YFB0401103)。
