摘要
通过搭建一套以紫外LED作为光源的热反射热成像测温装置,对SiC衬底上的AlGaN/GaN高电子迁移率晶体管(HEMT)的沟道GaN材料的峰值温度进行了测量。搭建了一套以365 nm浅紫外LED为光源的热反射成像测温装置。采用清晰度算法和纳米量级三轴压电位移台实现对被测件的实时重聚焦。该装置具备400 nm的空间分辨率,被用于测量被测件GaN材料的峰值温度。测量过程中被测件漏源电压固定在28 V,漏源电流以100 mA为步进从200 mA变化至500 mA。利用具备2.8μm空间分辨率的显微红外热像仪进行了对比试验。随着漏源电流的上升,紫外热反射热成像测温结果比显微红外热成像测温结果高10.0℃至31.5℃。紫外热反射热成像技术较优的空间分辨率和景深指标使其能够更准确地测量GaN HEMT器件的峰值温度。
The peak temperature of GaN channel in a SiC based AlGaN/GaN high electron mobility transistor(HEMT)was test by a self-build ultraviolet thermoreflectance thermography.A thermoreflectance thermography test setup with a 365 nm LED light source was established.A sharpness algorithm and a three-axis nanometre piezo-stage were used to refocus the DUT through the whole procedure.The ultraviolet thermoreflectance thermography with 400nm spatial resolution was used to measure the peak temperature of GaN area.In the whole test process,the Vds was stable at 28 V,the Ids was increased from 200 mA to 500mA in 100 mA steps.For comparison,infrared radiation(IR)thermography with 2.8μm spatial resolution was used.As the current increases,the temperature rise tested by ultraviolet thermoreflectance was 10.0℃~31.5℃higher than that tested by IR.Ultraviolet thermoreflectance with superior spatial resolution and depth of focus can test the peak temperature of GaN HEMT more accurately.
作者
翟玉卫
刘岩
荆晓冬
丁晨
吴爱华
ZHAI Yuwei;LIU Yan;JING Xiaodong;DING Chen;WU Aihua(The 13th Research Institute,CETC,Shijiazhuang Hebei 050051,China)
出处
《电子器件》
CAS
北大核心
2022年第6期1348-1353,共6页
Chinese Journal of Electron Devices
