摘要
利用量子力学中的密度矩阵算符理论和迭代方法 ,得到Morse势阱中的光整流系数和电光效应的解析表达式 .并以典型的GaAs/AlGaAs莫尔斯量子阱为例进行了数值计算 .研究结果表明 ,较大的光整流系数和电光效应与系统的非对称性有关 ,系统的非对称性越大 ,光整流系数和电光效应越大 .
Analytical expressions of optical rectification and electro-optic effects in Morse quantum well are obtained by density matrix approach and iterative method. Numerical results are illustrated for a typical GaAs/AlGaAs Morse quantum well. It is found that the optical rectification coefficient and electro-optic effects increase with the enhancement of the asymmetry of Morse quantum well.
出处
《广州大学学报（自然科学版）》
CAS
2002年第6期7-11,共5页
Journal of Guangzhou University:Natural Science Edition
基金
ThisworkwassupportedbyNaturalScienceFoundation(No .0 11835 )ofGuangdongProvince ,P .R .China .
