摘要
本文利用密度矩阵方法得到了加偏置电场的抛物量子阱中电光效应的解析表达式，并以典型的ＧａＡｓ抛物量子阱为例进行了数值计算研究结果表明，电光效应随偏置电场和抛物势频率的增大而增强。
Analytical expressions of electro optic effects in electric field biased parabolic quantum wells are obtained by density matrix method.Numerical results are illustrated for a typical GaAs parabolic quantum well.It is found that the electro optic effect increases with the enhancement of the applied electric field F and the parabolic confinement frequency ω 0,and that the electro optic effect in the GaAs parabolic quantum well is over 10 times larger than that in bulk GaAs.
出处
《光子学报》
EI
CAS
CSCD
1998年第6期494-498,共5页
Acta Photonica Sinica
基金
广东省自然科学基金
