摘要
碳化硅器件的优点不仅能提高电力电子装置功率密度,而且使设备体积小型化。文中设计了一种用于直流变换器的SiC MOSFET驱动电路,通过双脉冲电路对SiC MOSFET的动态特性进行测试,验证不同驱动电阻、不同频率对碳化硅功率器件特性的影响。在直流变换器中使用电压等级相同的SiC MOSFET和Si IGBT,对比开通和关断时间,将不同占空比对应的输出电压进行比较。利用PSpice软件仿真,结果显示驱动电路设计合理,验证了SiC MOSFET具有开关速度快、开关损耗小、驱动电阻小、工作频率高等优点,比Si IGBT控制的直流变换器输出电压误差小。
The advantages of Silicon Carbide devices can not only improve the power density of power electronic device,but also make the device small in size. In this paper,a SiC MOSFET driving circuit is designed for DC converter. The dynamic characteristics of SiC MOSFET are tested by double pulse circuit,the influence of different driving resistors and different frequencies on the characteristics of SiC power device. The same voltage grade of the SiC MOSFET and Si IGBT in DC converter circuit,compare to turn on and off time of the switch,and output voltage. PSpice software is used to simulation,the results show that the driving circuit design is reasonable,it proves that SiC MOSFET has the advantages of fast switching speed,small switching loss,small driving resistance and high working frequency. The output voltage error is smaller than that of DC converter controlled by Si IGBT.
作者
韩芬
张艳肖
石浩
HAN Fen;ZHANG Yanxiao;SHI Hao(Department of Electrical and Information Engineering,Xi’an Jiaotong University City College,Xi’an 710018,China)
出处
《电子设计工程》
2022年第17期109-113,共5页
Electronic Design Engineering
基金
陕西省教育科学“十三五”规划2020年度课题(SGH20Y1380)。
