摘要
钛硅碳(Ti_(3)SiC_(2),TSC)是一种兼具金属材料和陶瓷材料优异性能的新型三元化合物MAX相。Ti_(3)SiC_(2)作为高导电功能涂层具有很大的应用潜力,近年来受到越来越多的关注。Ti_(3)SiC_(2)涂层的制备技术在不断改革优化,主要有五种常见制备工艺,分别是化学气相沉积法(CVD)、物理气相沉积法(PVD)、固相反应合成法(Solid-state reaction)、气溶胶沉积法(ADM)和热喷涂法(Thermal spraying)。Ti_(3)SiC_(2)涂层的性能在很大程度上与其纯度相关,通常制得的Ti_(3)SiC_(2)涂层均含有一定程度的杂质,这是制约其广泛应用的一个重要因素。Ti_(3)SiC_(2)涂层中经常出现的杂质主要是TiC、Ti_(5)Si_(3)、SiC、TiSi_(2)等,不同的制备方法产生的杂质种类也不一样。为了提高Ti_(3)SiC_(2)涂层的纯度,需要对其制备工艺进行探索和优化。目前,反应化学气相沉积(RCVD)实现了通过消耗碳化硅(SiC)子层在石墨基底上生长纯Ti_(3)SiC_(2)涂层。近年来利用ADM也实现了在室温下合成纯Ti_(3)SiC_(2)涂层,这一技术降低了常规Ti_(3)SiC_(2)涂层的合成温度。此外,PVD法不仅为低温制备Ti_(3)SiC_(2)涂层提供了可能性,还实现了Ti-Si-C复合涂层的工业化生产。本文综述了Ti_(3)SiC_(2)涂层的研究现状,分析了Ti_(3)SiC_(2)涂层独特的晶体结构及优异性能,介绍了近年来几种常见的Ti_(3)SiC_(2)涂层制备技术,并指出了目前合成纯Ti_(3)SiC_(2)涂层所面临的巨大挑战。
Ti_(3)SiC_(2)(TSC)is a new type of ternary compound MAX phase with excellent properties of both metallic and ceramic materials.Ti_(3)SiC_(2)as a high conductive coating with great application potential has attracted more and more attention in recent years.The preparation technologies of Ti_(3)SiC_(2)coating are constantly being reformed and optimized.There re mainly five common processes to prepare Ti_(3)SiC_(2)coating,including chemical vapor deposition(CVD),physical vapor deposition(PVD),solid-state reaction,aerosol deposition method(ADM)and thermal spraying,respectively.The properties of Ti_(3)SiC_(2)coatings are closely related to their purity to a large extent.Usually,a certain degree of impurities are contained in Ti_(3)SiC_(2)coating,which has become an important factor restricting its wide application.It is found that the impurities in Ti_(3)SiC_(2)coating are mainly TiC,Ti_(5)Si_(3),SiC,TiSi_(2),etc.More over,the kinds of impurities produced by different methods are different.In order to improve the purity of Ti_(3)SiC_(2)coating,it is necessary to explore and optimize the preparation process.At present,reactive chemical vapor deposition(RCVD)has realized the growth of pure Ti_(3)SiC_(2)coating on graphite substrate by consuming silicon carbide(SiC)sublayer.Besides,ADM has also produced pure Ti_(3)SiC_(2)coatings at room temperature,which reduces the synthesis temperature of conventional Ti_(3)SiC_(2)coating.In addition,PVD technology not only provides the possibility of synthesizing Ti_(3)SiC_(2)coating at low temperature,but also realizes the industrial production of Ti-Si-C composite coating.This paper comprehensively reviews the recent research on Ti_(3)SiC_(2).The unique crystal structure and excellent properties of Ti_(3)SiC_(2)coating are discussed.The different ways to prepare Ti_(3)SiC_(2)coating were analyzed and current challenges in the synthesis of pure Ti_(3)SiC_(2)coating were also introduced.Furthermore,the current and potential applications of Ti_(3)SiC_(2)coating has been summarized.Overall,the analyses and discussions of various Ti_(3)SiC_(2)coating synthesis technologies in this review will be contributed to synthesis of high purity Ti_(3)SiC_(2)coating in the future.
作者
朱界
张方舟
谢有菊
贾林涛
王梦千
李爱军
ZHU Jie;ZHANG Fangzhou;XIE Youju;JIA Lintao;WANG Mengqian;LI Aijun(Institute of Materials,School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China)
出处
《材料导报》
EI
CAS
CSCD
北大核心
2021年第23期23025-23032,23039,共9页
Materials Reports
基金
国家自然科学基金(21676163,51602189)。
