摘要
The metal-organic-decomposed lanthanum cerium oxide(LaCeO_(2))solution was spin-coated on p-type Si substrate to form thin films.The method of microwave-assisted annealing was adopted to modify the surface properties of the deposited thin films.The post-deposition annealing(PDA)at different microwave powers and thermal annealing temperature of 400℃was performed on LaCeO_(2)thin films spin-coated on Si.Influence of this PDA on structural and electrical properties of deposited LaCeO_(2)thin films was studied and compared.X-ray diffraction(XRD)and Fourier transform infrared spectroscopy(FTIR)results reveal the great improvement in the structural properties in terms of removal of residual impurities from LaCeO_(2)films,reduced roughness and improvement in crystalline properties as compared to those of hot-plate-annealed samples.The electrical properties of Al/LaCeO_(2)/Si stack were also studied.The different electrical parameters such as k value,interface trap density(Dit)and effective oxide charges(Qeff)were extracted and found to be improved with the increase in microwave annealing power.
基金
Council of Scientific and Industrial Research(CSIR),New Delhi(No.22(0716)/16/EMR-Ⅱ)
Special Assistance Programme on Departmental Research Support(SAP-DRS)from University Grant Commission(UGC),New Delhi(No.503/4/DRS-Ⅲ/2016-(SAP-Ⅰ)。
