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Growth and interface of amorphous La_2Hf_2O_7/Si thin film 被引量：3

Growth and interface of amorphous La_2Hf_2O_7/Si thin film
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摘要 Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth. Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.
作者 程学瑞 戚泽明 张焕君 张国斌 潘国强
机构地区 Department of Technology and Physics National Synchrotron Radiation Laboratory
出处 《Journal of Rare Earths》 SCIE EI CAS CSCD 2012年第2期189-192,共4页 稀土学报（英文版）
基金 Projects supported by the National Natural Science Foundation of China (10974191) the School Doctorial Foundation of Zhengzhou University of Light Industry (2010BSJJ028)
关键词 pulsed laser deposition La2Hf2O7 films rare earths pulsed laser deposition La2Hf2O7 films rare earths
分类号 O484.1 [理学—固体物理] TB43 [一般工业技术]
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参考文献25

  • 1Leskel(a) M,Kukli K,Ritala M. Rare-earth oxide thin films for gate dielectrics in microelectronics[J].Journal of Alloys and Compounds,2006,(1/2):27.doi:10.1016/j.jallcom.2005.10.061.
  • 2Roberton John. High dielectric constant gate oxides for metal oxide Si transistors[J].Reports on Progress in Physics,2006,(2):327.doi:10.1088/0034-4885/69/2/R02.
  • 3Wilk G D,Wallace R M,Anthony J M. High-k gate dielectrics:Current status and materials properties considerations[J].Journal of Applied Physics,2001,(10):5243.doi:10.1063/1.1361065.
  • 4Lee Byoung Hun,Kang Laegu,Renee Nieh,Qi Wenjie Lee Jack C. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing[J].Applied Physics Letters,2000,(14):1926.doi:10.1063/1.126214.
  • 5Renault O,Samour D,Damlencourt J F,Blin D Martin F. HfO2/SiO2 interface chemistry studied by synchrotron radiation X-ray photoelectron spectroscopy[J].Applied Physics Letters,2002.3627.doi:10.1063/1.1520334.
  • 6Lu Xubing,Maruyama Kenji,lshiwara Hiroshi. Characteriza-tion of HfTaO films for gate oxide and metal-ferroelectric-in-sulator-silicon device applications[J].Journal of Applied Physics,2008.044105.doi:10.1063/1.2871772.
  • 7Jin Hua,Oh Suhk Kun,Kang Hee Jae,Tougaard Sven. Electronic properties of ultrathin HfO2,Al2O3,and Hf-Al-O dielectric films on Si(100) studied by quantitative analysis of reflection electron energy loss spectra[J].Journal of Applied Physics,2006.083713.doi:10.1063/1.2360382.
  • 8Wilk G D,Wallence R M,Anthony J M. Hafnium and zirconium silicates for advanced gate dielectrics[J].Journal of Applied Physics,2000,(1):484.doi:10.1063/1.371888.
  • 9Wei F,Tu H L,Wang Y,Yue S J Du J. Epitaxial La2Hf2O7thin films on Si(001) substrates grown by pulsed laser deposition for high-k gate dielectrics[J].Applied Physics Letters,2008.012901.doi:10.1063/1.2828692.
  • 10Roberton John. Maximizing performance for higher K gate dielectrics[J].Journal of Applied Physics,2008.12411.

同被引文献41

  • 1Harris H, Choi K, Biswas N, et al. HfO2 gate dielectric with 0.5 nm equivalertt oxide thickness [ J ]. Applied Physics Letter, 2002, 81(6) :1065.
  • 2Lo S H, Buchana D A,Taur Y, et al. Quantum-mechanical mode- ling of electron tunneling currcnt from the inversion layer of nltra- thin-oxide nMOSFET' s [ J ]. IEEE Electron Device Letters, 1997,18:209 -211.
  • 3Susanne S. Thermodynamic considerations in the stability of bina- ry oxides for alternative gate dielectrics in complementary metal- oxide-semiconductors[ J]. Journal of Vacuum Science & Techno- logy B ,2004,22:791 -800.
  • 4Robertson J. High dielectric constant gate oxides for metal oxide Si transistors [ J ]. Reports on Progress in Physics, 2006, 69: 327 -396.
  • 5Zheng X H,Huang A P,Xiao Z S,et al. Diffusion behavior of dual capping layers in TiN/LaN/AIN/HfSiOx/Si stack [ J]. Ap- plied Physics Letters ,2011,99 (13) :1319141 1-131914-3.
  • 6Afanas' ev V V, Houssa M,Stesmans A, et al. Influence of A12 O3 crystallization on band offsets at interfaces with Si and TiNx[ J]. Applied Physics Letters ,2011,99 ( 7 ) :072103-1 -072103-3.
  • 7Ealet B,Elyakhloufi M H, Gillet M, et al. Electronic and crystal- lographic structure of γ-alumina thin films [ J ]. Thin Solid Films, 1994,250:92-100.
  • 8Kang S W,Yang K J,Yong K J,et al. Precursors for deposition of strontium bismuth tantalate films by direct liquid injection-metal- lorganic chemical vapor deposition [ J ]. Journal of Electrochemi- cal Society ,2002,149 (1) : C44 -C49.
  • 9Hattori T, Yoshida T, Shiraishi T, et al. Composition, chemical structure, and electronic band structure of rare earth oxide/ Si(100) interfacial transition layer [ J ]. Microelectronic Engi-neering,2004,72:283 -287.
  • 10Chan R, J kavalieros J, Roberds B, et al. 30nm physical gate length CMOS transistor with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays[ C ]//Electron Devices Meeting,USA,2000:45 -48.

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Journal of Rare Earths
2012年 第2期

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