摘要
大功率GaN HEMT器件在工作时较高的热流密度引发器件高温,而高温会显著影响器件性能及可靠性。从不同器件结构设计出发,结合器件热量传递理论,建立了器件热阻模型;采用高速红外热像仪试验分析了器件结构对GaN HEMT器件稳态热特性的影响,定量给出了不同总栅宽、不同单指栅宽、不同栅间距在不同功率密度下的稳态温升。相关结果可用于研发阶段器件结温的快速评估。
The high-power GaN HEMT device produces high heat flux density when working,which will lead to high temperature of the device,and high temperature can significantly affect the performance and reliability of the device.Starting from the design of different device structures and combing with the heat transfer theory,the thermal resistance model is established in this paper.The influence of device structures on steady thermal characteristics of GaN HEMT device is analyzed by using infrared microscopy.The steady-state temperature rise of the device is quantitatively given with different gate spaces,single finger gate widths and total gate widths under different power densities.The results can be used to quickly evaluate the junction temperature in research stage.
作者
施尚
林罡
孙军
邵国健
周书同
陈堂胜
SHI Shang;LIN Gang;SUN Jun;SHAO Guojian;ZHOU Shutong;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2021年第1期69-74,共6页
Research & Progress of SSE
关键词
氮化镓高迁移率晶体管
器件结构
热特性
热阻
GaN HEMT
device structure
thermal characteristics
thermal resistance
