摘要
为了提高半导体激光二极管的输出功率和可靠性,通过在有源区两侧势垒层和波导层之间引入高禁带宽度的GaAsP,抑制有源区载流子的泄漏,极大地改善了器件的性能。研究结果表明:在10~40℃温度范围内器件特征温度从原来的150 K提高至197.37 K(-75.76℃),峰值波长随温度的漂移系数为0.207 nm/℃;条宽200μm、腔长2000μm的9XX nm激光二极管可靠性工作的最大输出功率高达14.4 W;器件在注入电流为7 A时取得71.8%的最大电光转换效率,斜率效率为1.21 W/A。器件在恒定电流下的加速老化测试显示激光二极管可靠性工作寿命达2000 h以上。
In this work, we introduce a high-band-gap GaAsP between the barrier layer and the waveguide layer on both sides of the active region to improve the output power and reliability of a semiconductor laser diode. The leakage of carriers in the active region is suppressed, and the device′s performance is greatly improved. Results show that the characteristic temperature of the device increases from 150 to 197.37 K(-75.76 ℃) in the temperature range of 10--40 ℃, and the temperature-dependent drift coefficient of peak wavelength is 0.207 nm/℃. The maximum output power of a 9 XX-nm laser diode with a strip width of 200 μm and cavity length of 2000 μm is as high as 14.4 W. The device achieves a maximum electro-optical conversion efficiency of 71.8% for an injection current of 7 A;the slope efficiency is 1.21 W/A. An accelerated aging test of the device at constant current shows that the laser diode has a reliable operating life of over 20000 h.
作者
袁庆贺
井红旗
仲莉
刘素平
马骁宇
Yuan Qinghe;Jing Hongqi;Zhong Li;Liu Suping;Ma Xiaoyu(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronics,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《中国激光》
EI
CAS
CSCD
北大核心
2020年第4期53-57,共5页
Chinese Journal of Lasers
基金
国家自然科学基金(41414010302)。
关键词
激光光学
激光二极管
载流子泄漏
特征温度
波长漂移
寿命
laser optics
laser diode
carrier leakage
characteristic temperature
wavelength drift
lifetime
