摘要
Aligned SnS nanowires arrays were grown via a simple chemical vapor deposition method.As-synthesized SnS nanowires are single crystals grown along the[111]direction.The single SnS nanowire based device showed excellent response to near infrared lights with good responsivity of 267.9 A/W,high external quantum efficiency of 3.12×10^4%and fast response time.Photodetectors were built on the aligned SnS nanowire arrays,exhibiting a light on/off ratio of 3.6,and the response and decay time of 4.5 and 0.7 s,respectively,to 1064 nm light illumination.
基金
National Natural Science Foundation of China(61625404,61888102).
