摘要
We present an ultrasensitive ultraviolet （UV） detector based on a p-type ZnS nanoribbon （NR）/indium tin oxide （ITO） Schottky barrier diode （SBD）. The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10^-17 W （-85 photons/s on the NR） at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 10^20 cm.Hz1/2.W^-1 and 6.6 × 10^5, respectively. It is found that the presence of the trapping states at the p-ZnS NWITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developiphigh-performance optoelectronic devices in the future.
我们在场 ultrasensitive 紫外紫外察觉者基于 p 类型 ZnS nanoribbon NR/indium 听氧化物 ITO Schottky 障碍二极管 SBD。设备展出能允许 SBD 与 6 湡 ? 慨 ? 湡愠灰牡湥 ? 捡楴慶楴湯攠敮杲 ? 獡氠睯愠 ? 的事件力量检测紫外轻照耀的伪 photovoltaic 行为 ?? ″ ? 鐿?? 鐿?? 颒酃 ? 鮬???? 辬???? 殰吗？？
