摘要
创新性提出低温退火下异质结(SHJ)太阳电池的叠层减反射结构。采用等离子体增强化学气相沉积技术在沉积金属电极后的SHJ太阳电池入光面依次沉积SiN_x和SiO_x薄膜,形成SiO_x/SiN_x/IWO三层减反射膜,则电极部分为SiO_x/SiN_x/Ag/IWO的叠层结构,经低温退火银浆穿透表面介电薄膜形成导电通路。结果表明,SiO_x/SiN_x/IWO叠层具有优异的光学透过性,并显著降低电池表面反射损失。与单层IWO薄膜相比,厚度分别为90、30、60 nm的SiO_x/SiN_x/IWO的三层减反射膜使平均反射率下降至5.9%,对应波段外量子效率显著提高,SHJ电池短路电流密度和转换效率分别提高1.22 mA/cm^2和0.96%,具有巨大的应用潜力。
This paper fabricated triple-layer anti-reflection structures on silicon heterojunction solar cell under low temperature annealing process. After finishing printing metal electrodes,SiNx and SiOx films were deposited on the top of SHJ solar cell to form SiOx/SiNx/IWO triple layers anti-reflection coatings. The region where electrode is located composes by SiOx/SiNx/IWO stacks. Thus,silver paste fully burn through dielectric layers during the low temperature annealing process to form conductive path. The results show that SiOx/SiNx/IWO stacks have excellent optical transmittance and can effectively decrease the reflection loss from the front of SHJ solar cell. Compared to single layer IWO film,SiOx/SiNx /IWO with the thicknesses of 90、30 and 60 nm achieved the lowest average reflectance of 5.9% at wavelength of 500-1200 nm and the quantum efficiency is significantly improved. The short circuit current density(Jsc)of SHJ solar cell is increased by1.22 mA/cm2,which results in an improvement of solar cell efficiency about 0.96%. The SiOx/SiNx /IWO stacks show great potential for industrial application.
作者
周杰
俞健
马忠权
刘正新
Zhou Jie;Yu Jian;Ma Zhongquan;Liu Zhengxin(College of Science,Shanghai University,Shanghai 200444,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 201800,China)
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2020年第2期303-309,共7页
Acta Energiae Solaris Sinica
基金
上海市青年科技英才扬帆计划(17YF1423000)
国家自然基金(61204005)
上海张江创新平台建设资金(ZJ2015-ZD-001)支持。
关键词
叠层减反射
光电特性
低温退火
SHJ电池
triple-layer antireflection
photoelectric characteristics
low-temperature annealing
SHJ solar cell
