摘要
本文报导在 Si 衬底上拉制聚酰胺 LB 膜的电容-电压特性,结果表明:它具有与其它绝缘膜相似的特性,为聚酰胺 LB 膜应用于场效应器件奠定了基础。
C-V characteristics of polyimide Langmuir-Blodegett films is described in thispaper.The obtained results are similar to other insulator films.This is basic of polyimide LBfilms application in field effect transistor(MLSFET).
关键词
LB膜
绝缘膜
聚酰胺
Langmuir-Blodgett(LB)films
C-V characteristics
insulator films
