摘要
本文研究了MOSFET的电离辐照效应,给出了辐照在MOSFET栅介质中引起氧化物电荷对阈电压的贡献与辐照剂量和栅偏置电场的相互依赖关系.结果表明,辐照引起的氧化物电荷与管子的沟道种类无关.另外,漏源电压对MOSFET的辐照响应也有影响.统计数据表明,对管子阈电压漂移有贡献的界面态的能级范围大约为 E_s/2.对实验结果进行了讨论.
Ionizing radiation effects of MOSFETs have been studied. The empirical relationship of the threshold voltage shift caused by radiation induced oxide-trapped charges with irradia-tion dose and gate bias is given. The results show that the oxide-trapped charges induced byirradiation are not dependent on the channel type of MOSFET, and drain-source voltage is afactor of affecting the irradiation response. In addition, the statistical data show that irradiationInduced interface states within energy level of E_g/2 contribute to the threshold voltage shift. Theexperimental results are discussed as well.
