摘要
本文简要介绍了目前国际上GaAs超高速D/A转换器的研制情况。在详细分析了几种常用类型D/A转换电路工作原理的基础上,结合现有GaAs VHSIC的制作工艺条件,设计并制作了一种4位单片集成GaAs MESFET D/A转换电路。测试结果表明,该电路分辨率为4位,转换速率办1Gs/s,建立时间小于1.0ns,微分线性误差小于±1/2LSB,功耗约为20mW。
This paper briefly introduces the state of the art of very high speed digital-analog converter (DAC). The principles of commonly used types of DAC are analyzed. A monolithic integrated 4 bit GaAs MESFET D/A circuit is designed and fabricated using GaAs VHSIC technology being used now. The testing results are given: 4-bit resolution, conversion rate of 1 Gs/s, setting time of less than 1.0ns, differential linearity of less than ±1/2 LSB, and power dissipation of about 20mW.
出处
《半导体情报》
1992年第3期35-43,52,共10页
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