摘要
详述了单片超高速2G bps G aA s 4b it数模转换器(DAC)的设计、制造及测试。在南京电子器件研究所标准76 mm G aA s工艺线采用0.5μm全离子注入M ESFET工艺完成流片。芯入输入输出阻抗实现在片50Ω匹配。4 b it DAC的微分非线性(DN L)为±0.22最低有效位(LSB),积分非线性(IN L)为±0.45LSB,达到5.2 b it的转换精度。该单片电路提供差分互补输出,长周期输出特性无漂移。其最高转换速率可达2 G bps,建立时间小于250 ps,电路核心部分功耗为110 mW。
Design,realization and test of a high-speed GaAs monolithic 2Gbps 4bit DAC are discussed. This circuit has been fabricated by 0. 5 μm fully ion-implanted GaAs MESFET technology in NEDI φ76 mm GaAs process line. DAC is designed for on wafer I/O impedance matching. Its DNL is ±0. 22LSB, and INL is ±0. 45LSB. The accuracy of this 4bit DAC is up to 5.2 bit. The circuit has two complementary outputs, and its long term characteristic has no drift. The highest conversion rate of the 4bit DAC is 2Gbps, and its settle time is less than 250 ps. The power dissipation of the core circuit is 110 mW.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第1期34-37,共4页
Research & Progress of SSE
