摘要
在现代功率器件中,为了提高功率器件的击穿电压,降低导通电阻,超结结构得到广泛的应用。为了降低器件工作时的导通电阻,增大电流的流经面积,降低J-FET效应,在功率器件的制造生产中,超结区中相互交叠的P柱和N柱,它们的掺杂浓度和设计尺寸并不能做到完全的相同。所以,当P柱或N柱的尺寸改变后,如果不进行超结区中N柱和P柱的掺杂浓度进行修正,将会导致超结区中出现大量的不平衡电荷,这些不平衡电荷将会严重影响超结的性能。本文在现有的结论下,以对称非理想超结为基础,提出一种对超结区内梯形PN柱掺杂浓度的修正方法,并针对这种方法对非理想对称超结和非理想非对称超结进行仿真验证,证明了该方法的适用性。
Superjunction structures have been widely used to increase the breakdown voltage of power devices and reduce the conduction resistance in modern power devices. In order to reduce the on- resistance,increase the current flow area and reduce the J-FET effect,the doping concentration and design size of P and N pillars overlapped in the superjunction region can not be completely the same in the manufacturing of power devices. Therefore,if the doping concentration of N and P pillars in the superjunction region is not corrected after the size change of P or N pillars,a large number of unbalanced charges will appear in the superjunction region,which will seriously affect the performance of the superjunction. In this paper, based on the existing conclusions and symmetric and imperfect superjunctions,we propose a new method. In this paper,a method to correct the doping concentration of the trapezoidal PN column in the superjunction area is proposed and validated by simulation.
作者
王森
向超
陆素先
钟传杰
WANG Sen;XIANG Chao;LU Su-xian;ZHONG Chuan-jie(College of Internet of Things,Jiangnan University,Wuxi 214122,China;SIPPR Engineering Group.,Ltd.,Zhengzhou 450007,China)
出处
《电子设计工程》
2019年第16期61-65,共5页
Electronic Design Engineering
