摘要
HfO_2因具有大的介电常数、宽的带隙、低的漏电流、与Si的导带偏移较大且与Si的晶格匹配良好,在半导体工业领域获得了广泛的应用;同时,Hf O2有着高的熔点,低的导热系数及蒸发率,优良的热相容、热障及热扩散屏障等性能,是目前高温抗氧化涂层材料最具希望的候选材料。本文简述了HfO_2薄膜几种常见的制备方法及相应特点。
Due to its high dielectric constant, wide band gap, low leakage current, large conduction band offset and excellent lattice matchwith Si, HfO2 obtained to have a widespread application in the field of semiconductor industry; also, with it's high melting point, low thermalconductivity and evaporation rate, excellent thermal compatibility, thermal barrier and thermal diffusion barrier properties, HfO2 tends tobe the most promising candidate for coating materials with high temperature oxidation resistance. This paper describes several commonpreparation methods and corresponding features of HfO2 films.
作者
刘少鹏
蔡宏中
魏燕
祁小红
胡昌义
LIU Shaopeng;CAI Hongzhong;WEI Yan;QI Xiaohong;HU Changyi(State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, Yunnan, China)
出处
《陶瓷学报》
CAS
北大核心
2016年第3期225-229,共5页
Journal of Ceramics
基金
国家自然科学基金项目(51361014
51361015)
国家自然科学基金青年基金项目(51201076)
关键词
HFO2
薄膜
制备方法
晶体结构
性能
HfO2
thin film
preparation methods
crystal structure
property
