摘要
利用电子束蒸发、离子束辅助沉积和离子束反应溅射三种制备方法制备了单层HfO2薄膜,对薄膜样品的晶体结构、光学特性、表面形貌以及吸收特性进行了研究。实验结果表明,薄膜特性与制备工艺有着密切的关系。电子束蒸发和离子束反应溅射制备的薄膜为非晶结构,而离子束辅助制备的薄膜为多晶结构。电子束蒸发制备的薄膜折射率较低,薄膜比较疏松,表面粗糙度较小,吸收相对较小,而离子束辅助以及离子束反应溅射制备的薄膜折射率较高,薄膜的结构比较致密,但表面粗糙度较大,吸收相对较大。不同制备工艺条件下薄膜的光学能隙范围为5.30～5.43eV,对应的吸收边的范围为228.4～234.0nm。
Single layer HfO2 thin films have been prepared respectively by Electron Beam Evaporation （EBD）, Ion Assisted Deposition （IAD） and Ion Beam Reactive Sputtering （IBRS）. Crystal structures, optical properties, surface topography and absorption of these deposited films have been studied. It is found that thin film properties have a close relationship with deposition technologies. The EBD and IBRS films are largely amorphous, whereas the IAD films are polycrystalline. Comparison with EBD films, the IAD and IBRS films, of which the structures are very compact, display higher refractive index, surface roughness and absorption. The optical band gap energy of these films are found to be 5.30～5.43 eV, and the corresponding optical absorption edge range are found to be from 228.4 nm to 234.0 nm.
出处
《光电工程》
CAS
CSCD
北大核心
2012年第2期134-140,共7页
Opto-Electronic Engineering
关键词
电子束蒸发
离子束辅助沉积
离子束反应溅射
HFO2薄膜
薄膜特性
electron beam evaporation
ion assisted deposition
ion beam reactive sputtering
HfO2 thin films
thin film properties
